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| MBR1030CT-MBR1060CT Schottky Barrier Recitifier PRODUCT SUMMARY TO-220 TO-220 Plastic-Encapsulate Transistors FEATURES Scottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Very low forward voltage drop High Surge Capability High Current Capability and Low Forward Voltage Drop For use in low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE 123 1 Pb-free; RoHS-compliant ELECTRICAL CHARACTERISTICS ( Tamb = 25oC unless otherwise specified ) Characteristic Symbol 2 3 MBR MBR MBR MBR MBR MBR 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage PMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC=105 Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load @ t 2.0s Forward Voltage Drop @ IF=5.0A, TC=125 @ IF=5.0A, TC= 25 @ IF=10A, TC= 25 Peak Reverse Current at Rated DC Blocking Voltage @ TC= 25 @ TC=125 (JEDEC Method) Repetitive Peak Reverse Surge Current VRRM VRWM VR VR(RMS) IO 21 24.5 28 10 31.5 35 42 V A 30 35 40 45 50 60 V IFSM 125 A IRRM 0.57 VFM 0.70 0.84 IRM Cj Tj, TSTG 1.0 0.70 0.80 0.95 0.1 15 150 -65 to +150 A V mA pF Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC. 01/29/2007 Rev.1.00 www.SiliconStandard.com 1 MBR1030CT-MBR1060CT Schottky Barrier Recitifier Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 01/29/2007 Rev.1.00 www.SiliconStandard.com 2 |
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